Crack stops

Details Crack stops Crack stops

1997-03-24

1998-08-04

Picardat, Kevin

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

438460, H01L 2146

Patent

active

057893020

ABSTRACT:
Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.

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patent: 5422286 (1995-06-01), Yang
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