Crack stop trenches in multi-layered low-k semiconductor...

Details Crack stop trenches in multi-layered low-k semiconductor... Crack stop trenches in multi-layered low-k semiconductor...

2005-05-23

2009-08-11

Clark, S. V (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C257S622000

Reexamination Certificate

active

07572738

ABSTRACT:
A method is provided for fabricating a semiconductor device. The method begins by forming on a substrate an interconnect stack layer that includes a plurality of layers with interconnecting metal overlying the substrate. After forming the interconnect stack layer, a crack stop trench is formed in the interconnect stack layer. Finally, the crack stop trench is filled with a prescribed material.

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