Crack stop trenches

Details Crack stop trenches Crack stop trenches

2011-01-18

2011-01-18

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S460000, C438S465000, C257S620000, C257S508000

Reexamination Certificate

active

07871902

ABSTRACT:
Structures and methods of forming crack stop trenches are disclosed. The method includes forming active regions disposed in cell regions of a substrate, the cell regions separated by dicing channels, and forming back end of line (BEOL) layers over the substrate, the BEOL layers being formed over the cell regions and the dicing channels. Crack stop trenches are then formed encircling the cell regions by etching a portion of the BEOL layers surrounding the cell regions. The wafer is diced along the dicing channels.

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