Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-08-15
2006-08-15
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S777000, C257SE27137, C257SE27144
Reexamination Certificate
active
07091621
ABSTRACT:
A method and structure prevents crack propagation to the active die circuitry of a main die area during sawing around the outer periphery of the main die area. Stress relief elements, such as dummy vias, are provided in the scribe line area between the saw lane and the main die area. The dummy vias prevent cracks induced by the sawing process from propagating to the main die area.
REFERENCES:
patent: 5538924 (1996-07-01), Chen
patent: 6180261 (2001-01-01), Inoue et al.
patent: 6197618 (2001-03-01), Guillot et al.
patent: 6326296 (2001-12-01), Tsai et al.
patent: 6451681 (2002-09-01), Greer
patent: 6653710 (2003-11-01), Adkisson et al.
Advanced Micro Devices , Inc.
Nhu David
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