Crack resistant passivation layer

Details Crack resistant passivation layer Crack resistant passivation layer

1992-05-26

1998-05-05

Dang, Trung

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438784, 438778, 438958, H01L 21469

Patent

active

057473897

ABSTRACT:
A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivation deposition may need to be kept to a temperature low enough so that the boron compound used for the boron source does not decompose prior to reacting with other reactants.

REFERENCES:
patent: 4349584 (1982-09-01), Flatley et al.
patent: 4574467 (1986-03-01), Halfacre et al.
Becker et. al., "Process and Film . . . borophosphosilicate glass"; J. Vac. Sci. Technol. B 4(3); May/Jun. 1986; pp. 732-744.
Wolf; "Silicon Processing for the VLSI era"; vol. 1; 1986; pp. 187-191.
"MMT's Chemical Vapor Deposition Equiqment Guide"; Microelectric Manufacturing and Testing; May 1988; pp. 44-45.
"Doped SiO.sub.2 deposition from TMP in ApCVD"; Bartholomew et. al.; European Transactions on Telecommunications and Related Technologies, vol. 2, No. 4, Mar./Apr. 1990, pp. 167-172.
"Optimization of APCVD TEOS/O.sub.3 process for SiO.sub.2 and BPSG"; Bartholomew et al.; Third Annual Dielectrics and CVD Metallization Symposium, Feb. 11-12, 1991; pp. 110-145.
Wolf, "Silicon processing for the VLSI Era", vol. 1: Process Technology, Lattice Press, 1986, pp. 182-186.

Affiliated with

Also associated with

Rating

Crack resistant passivation layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crack resistant passivation layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crack resistant passivation layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-53959