Crack and residue free conformal deposited silicon oxide...

Details Crack and residue free conformal deposited silicon oxide... Crack and residue free conformal deposited silicon oxide...

2003-11-14

2009-12-01

Meeks, Timothy H (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

C427S372200, C427S379000, C427S255700, C438S024000, C438S048000, C438S106000, C438S424000, C438S425000, C438S427000, C438S455000, C438S456000, C438S706000, C438S734000, C438S735000, C438S761000, C216S002000, C216S058000, C216S072000, C216S073000, C216S075000, C216S079000

Reexamination Certificate

active

07625603

ABSTRACT:
A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.

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