Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2007-11-13
2007-11-13
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298160, C118S720000, C118S721000
Reexamination Certificate
active
10857217
ABSTRACT:
A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the plane of the wafer. The magnetic dipole ring may include 8 or more arc-shaped magnet segments arranged in a circle with the respective magnetization directions precessing by 720° around the ring. The dipole ring is preferably encapsulated in a vacuum-tight stainless steel carrier and placed inside the vacuum chamber. The carrier may be detachably mounted on a cover ring, on the shield, or on the interior of the chamber sidewall. In another embodiment, the magnet is a magnetic disk placed under the wafer. Such auxiliary magnets allow the magnetron sputter deposition of aligned magnetic layers.
REFERENCES:
patent: 4500409 (1985-02-01), Boys et al.
patent: 5444207 (1995-08-01), Sekine et al.
patent: 5496455 (1996-03-01), Dill et al.
patent: 5519373 (1996-05-01), Miyata
patent: 5527438 (1996-06-01), Tepman
patent: 5589039 (1996-12-01), Hsu
patent: 5593551 (1997-01-01), Lai
patent: 5616218 (1997-04-01), Alex
patent: 5660744 (1997-08-01), Sekine et al.
patent: 5666247 (1997-09-01), Shultz
patent: 5763851 (1998-06-01), Forster et al.
patent: 5897752 (1999-04-01), Hong et al.
patent: 5945008 (1999-08-01), Kisakibaru et al.
patent: 6014943 (2000-01-01), Arami et al.
patent: 6051122 (2000-04-01), Flanigan
patent: 6077403 (2000-06-01), Kobayashi et al.
patent: 6132575 (2000-10-01), Pandumsoporn et al.
patent: 6156170 (2000-12-01), Akari et al.
patent: 6190495 (2001-02-01), Kubota et al.
patent: 6743340 (2004-06-01), Fu
Zorpette, “The quest for the sp”,IEEE Spectrum, Dec. 2001, 30-35pp.
Johnson, “Magnetoelectronic memories last and last . . . ”IEEE Spectrum, Feb. 2000, 33-40 pp.
Parkin et al., “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)”,Journal of Applied Physics, vol. 85, No. 8, Apr. 15, 1999, 5828-5833pp.
Liu et al., “New rare-earth permanent magnets with an intrinsic coercivity of 10 kOe at 500° C,Journal of Applied Physics”, vol. 85, No. 8, Apr. 15, 1999, 5660-5662.
Tehrani et al., “High density submicron magnetoresistive random access memory (invited)”Journal of Applied Physics, vol. 85, No. 8, Apr. 15, 1999, 5822-5827 pp.
Applied Materials Inc.
Law Offices of Charles Guenzer
McDonald Rodney G.
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