Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-07-31
2009-10-13
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S532000, C257SE27016, C257SE27048
Reexamination Certificate
active
07602043
ABSTRACT:
A coupling capacitor and a semiconductor memory device using the same are provided. In an embodiment, each memory cell of the semiconductor memory device includes a coupling capacitor so that a storage capacitor can store at least 2 bits of data. The coupling capacitor has a capacitance having a predetermined ratio with respect to the capacitance of the storage capacitor. For this, the coupling capacitor is formed by substantially the same fabrication process as the storage capacitor. The predetermined ratio is obtained by choosing an appropriate number of individual capacitors, each with the same capacitance of the storage capacitor, to comprise the coupling capacitor. Also, the coupling capacitor is disposed on an interlayer insulating layer that buries a bit line in a cell region and a sense amplifier in a sense amplifier region.
REFERENCES:
patent: 5856938 (1999-01-01), Kasai et al.
patent: 6448852 (2002-09-01), Compton et al.
patent: 6720598 (2004-04-01), Wohlfahrt
patent: 6826072 (2004-11-01), Takashima
patent: 2002/0071324 (2002-06-01), Kitsukawa et al.
patent: 2002/0096771 (2002-07-01), Yamada et al.
patent: 2004/0056286 (2004-03-01), Jacob et al.
patent: 2004/0056287 (2004-03-01), Wohlfahrt
patent: 11-330272 (1999-11-01), None
patent: 10-1997-0063724 (1997-09-01), None
patent: 2001-0059663 (2001-07-01), None
patent: 2003-0001242 (2003-01-01), None
English language abstract of Korean Publication No. 10-1997-0063724, Sep. 12, 1997.
English language abstract of Japanese Publication No. 11-330272, Nov. 30, 1999.
English language abstract of Korean Publication No. 2001-0059663, Jul. 6, 2001.
English language abstract of Korean Publication No. 2003-0001242, Jan. 6, 2003.
Chung Tae-Young
Lee Eun-Cheol
Lee Jin-Woo
Yang Won-Suk
Mandala Victor A
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
LandOfFree
Coupling capacitor and semiconductor memory device using the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Coupling capacitor and semiconductor memory device using the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coupling capacitor and semiconductor memory device using the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4081469