Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-05
2011-07-05
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257SE21345, C257SE21586, C257SE29033, C257SE33003
Reexamination Certificate
active
07973358
ABSTRACT:
One or more embodiments relate to a semiconductor device, comprising: a substrate; and a radio frequency coupler including a first coupling element and a second coupling element spacedly disposed from the first coupling element, the first coupling element including at least one through-substrate via disposed in the substrate, the second coupling element including at least one through-substrate via disposed in the substrate.
REFERENCES:
patent: 4075581 (1978-02-01), Davidson et al.
patent: 5073761 (1991-12-01), Waterman et al.
patent: 6661386 (2003-12-01), Petros et al.
patent: 6906598 (2005-06-01), Roberson et al.
patent: 7741929 (2010-06-01), Hash
patent: 2007/0132029 (2007-06-01), Mitra et al.
Hanke Andre
Nagy Oliver
Infineon - Technologies AG
Infineon Techn. AG
Lebentritt Michael S
Schlazer Philip H.
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