Coating apparatus – Gas or vapor deposition – With treating means
Patent
1992-08-14
1994-03-08
Thomas, Tom
Coating apparatus
Gas or vapor deposition
With treating means
156345, 118715, 118723MR, 118723ER, C23C 1650
Patent
active
052923703
ABSTRACT:
In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.
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Haselton Halsey H.
Tsai Chin-Chi
Adams H. W.
Baskin Jonathan D.
Martin Marietta Energy Systems Inc.
Spicer James M.
Thomas Tom
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