Coupled body contacts for SOI differential circuits

Details Coupled body contacts for SOI differential circuits Coupled body contacts for SOI differential circuits

2005-03-15

2005-03-15

Lam, David (Department: 2818)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S205000, C365S230060

Reexamination Certificate

active

06868000

ABSTRACT:
A silicon on insulator (SOI) CMOS circuit, macro and integrated circuit (IC) chip. The chip or macro may include be an SRAM in partially depleted (PD) SOI CMOS. Most field effect transistors (FETs) do not have body contacts. FETs otherwise exhibiting a sensitivity to history effects have body contacts. The body contact for each such FET is connected to at least one other body contact. A back bias voltage may be provided to selected FETs.

REFERENCES:
patent: 5898617 (1999-04-01), Bushey et al.
patent: 6061268 (2000-05-01), Kuo et al.
patent: 6724681 (2004-04-01), Terzioglu et al.

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