Cost savings for manufacturing planar MOSFET devices achieved by

Details Cost savings for manufacturing planar MOSFET devices achieved by Cost savings for manufacturing planar MOSFET devices achieved by

1996-02-20

2000-08-15

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257491, 257494, H01L 27108, H01L 2976, H01L 2358

Patent

active

061040606

ABSTRACT:
Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve cost savings by simplified device structure and fabrication processes, and also by reducing the required die size. Specifically, in a novel MOSFET device, insulation of mobile ions are achieved by extending the poly gate and metal contacts such that the passivation layer is no longer required and the fabrication process is simplified such that the MOSFET device can be manufactured at a lower price. Furthermore, in another MOSFET device, the gate runner is used to replace the field plate such that the requirement of a field plate as that in a conventional MOSFET device is also eliminated and, by reducing the die size, the cost of manufacture is further reduced.

REFERENCES:
patent: 4633292 (1986-12-01), Fellinger et al.
patent: 5521409 (1996-05-01), Hshieh et al.

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