Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-09-12
1997-10-21
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257 20, 257 24, 257 25, H01L 2906
Patent
active
056799616
ABSTRACT:
According to the present invention, there is provided a correlation tunnel device capable of achieving a low power consumption without decreasing a drive force when a large-scale-integrated circuit is constituted. A correlation tunnel device according to the present invention comprises a first quantum dot structure including a first carrier confinement region having at least two discrete energy levels, a carrier conduction region adjacent to the first carrier confinement region, and a tunnel barrier arranged only between the first carrier confinement region and the conduction region, and a second quantum dot structure including a second carrier confinement region having at least two discrete energy levels, a carrier conduction region adjacent to the second carrier confinement region, and a tunnel barrier arranged only between the second carrier confinement region and the conduction region, wherein an energy level occupied by the carrier in the first carrier confinement region and an energy level occupied by the carrier in the second carrier confinement region have a correlation.
REFERENCES:
patent: 5440148 (1995-08-01), Nomoto
Higurashi Hitoshi
Hubler Alfred
Kawamura Kiyoshi
Toriumi Akira
Yamaguchi Fumiko
Kabushiki Kaisha Toshiba
Tran Minh-Loan
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