Corner protected shallow trench isolation device

Details Corner protected shallow trench isolation device Corner protected shallow trench isolation device

1994-12-02

1996-05-28

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257513, 257622, 257623, 257626, H01L 2900

Patent

active

055214223

ABSTRACT:
A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.

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