Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-06-30
2008-08-26
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
Reexamination Certificate
active
07417903
ABSTRACT:
Provided are a core voltage generator and a method for generating a core voltage in a semiconductor memory device. The core voltage generator includes a first discharge driver for discharging a core voltage terminal for an interval at which the voltage is higher than a target level, in response to a first enable signal activated for a first predetermined period after overdriving a bit line, and a second discharge driver for discharging the core voltage terminal for an interval at which the voltage at the core voltage terminal is higher than the target level by a predetermined threshold, in response to a second enable signal activated for a second predetermined period after overdriving the bit line, wherein the second predetermined period is shorter than the first predetermined period.
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Kim Ki-Ho
Kim Kyung-Whan
Ho Hoai V.
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Radke Jay
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