Copper wiring with high temperature superconductor (HTS) layer

Details Copper wiring with high temperature superconductor (HTS) layer Copper wiring with high temperature superconductor (HTS) layer

2006-09-12

2006-09-12

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23167, C257S663000, C257S758000, C257S700000, C257S701000, C257S759000, C257S760000, C257S764000, C257S762000, C257S766000, C257S298000, C257S664000, C257S751000

Reexamination Certificate

active

07105928

ABSTRACT:
Semiconductor devices and methods of forming the semiconductor devices using an HTS (High Temperature Superconductor) layer in combination with a typical diffusion layer between the dielectric material and the copper (or other metal) conductive wiring. The HTS layer includes a superconductor material comprised of barium copper oxide and a rare earth element. The rare earth element yttrium is particularly suitable. For semiconductor devices having other semiconductor circuits or elements above the wiring, a capping layer of HTS material is deposited over the wiring before a cover layer of dielectric is deposited.

REFERENCES:
patent: 5629268 (1997-05-01), Tanaka et al.
patent: 6420189 (2002-07-01), Lopatin
patent: 6518648 (2003-02-01), Lopatin
patent: 6541136 (2003-04-01), Kwon et al.
patent: 6642539 (2003-11-01), Ramesh et al.
patent: 6667231 (2003-12-01), Wu
patent: 2002/0155675 (2002-10-01), Hartner et al.

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