Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-04
2005-10-04
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000, C438S692000, C438S687000, C438S613000
Reexamination Certificate
active
06951812
ABSTRACT:
The structure and the fabrication method of an integrated circuit in the horizontal surface of a semiconductor body comprising a dielectric layer over said semiconductor body and a substantially vertical hole through the dielectric layer, the hole having sidewalls and a bottom. A barrier layer is positioned over the dielectric layer including the sidewalls within the hole and the bottom of the hole; the barrier layer is operable to seal copper. A copper-doped transition layer is positioned over the barrier layer; the transition layer has a resistivity higher than pure copper and is operable to strongly bond to copper and to the barrier layer, whereby electomigration reliability is improved. The remainder of said hole is filled with copper. The hole can be either a trench or a trench and a via.
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Brennan Kenneth D.
Jiang Qing-Tang
Tsu Robert
Anya Igwe U.
Brady III W. James
McLarty Peter K.
Smith Matthew
Telecky , Jr. Frederick J.
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