Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-08
2006-08-08
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S761000, C257S762000, C257S763000, C257S764000, C257S770000
Reexamination Certificate
active
07087997
ABSTRACT:
Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.
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Burrell Lloyd G.
Cooney, III Edward E.
Gambino Jeffrey P.
Heidenreich, III John E.
Lee Hyun Koo
Cioffi James J.
International Business Machines - Corporation
Lewis Monica
Whitham Curtis Christofferson & Cook PC
Wilczewski Mary
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