Copper sputtering target assembly and method of making same

Details Copper sputtering target assembly and method of making same Copper sputtering target assembly and method of making same

1999-06-02

2000-09-05

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C23C 1434

Patent

active

061137618

ABSTRACT:
Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.

REFERENCES:
patent: 5693203 (1997-12-01), Ohhashi et al.
Physical Metallurgy Principles 2nd Ed., 1973, p. 298.
V.A. Phillips, "The Effect of Certain Solute Elements on the Recyrstallization of Copper", 1952-53, pp. 185-208, vol. 81, Journal of the Institute of Metals.

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