Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-06-05
1998-06-23
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438687, H01L 214763, H01L 2144
Patent
active
057705194
ABSTRACT:
A multilayer semiconductor structure includes a conductive via. The conductive via includes a reservoir of metal having a high resistance to electromigration. The reservoir is made from a conformal layer of copper, or gold deposited over the via to form a copper, or gold plug located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the reservoir from diffusing into the insulating layer. The barrier layer and reservoir may be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and reservoir may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.
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IBM Technical Disclosure Bulletin, vol. 36, No. 02, "Electroless Plating Scheme to Hermatically Seal Copper Features", Feb. 1993.
Avanzino Steven
Cheung Robin
Erb Darrell
Gupta Subhash
Klein Richard K.
Advanced Micro Devices , Inc.
Dutton Brian
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