Copper Ni-Si-P alloy for an electronic device

Details Copper Ni-Si-P alloy for an electronic device Copper Ni-Si-P alloy for an electronic device

1992-02-18

1993-09-28

Dean, H.

Metal treatment

Stock

Age or precipitation hardened or strengthened

420485, 148685, C22C 906

Patent

active

052483517

ABSTRACT:
A copper alloy for an electronic device comprises 2.0 wt% -8 wt% of Ni, 0.1 wt% -0.8 wt% of P, 0.06 wt% -1 wt% of Si and the rest being Cu and unavoidable impurities.
The rest may include 0.03 wt% -2.0 wt% of Zn. The copper allow has an oxygen content of 20 ppm or less.

REFERENCES:
patent: 2155405 (1939-04-01), Crampton et al.
patent: 2155407 (1939-04-01), Crampton et al.
patent: 4362579 (1982-12-01), Tsuji
patent: 4446939 (1984-08-01), Kim et al.
CA 113(10):8334.0.m Mar. 1990.
Decision of the Bundespatentgericht of Apr. 25, 1990 (13W(pat) 48/47.
Bayer-Schwarzmaier-Zeiler, "10 years of BPatG", pp. 201-224.

Affiliated with

Also associated with

Rating

Copper Ni-Si-P alloy for an electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copper Ni-Si-P alloy for an electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper Ni-Si-P alloy for an electronic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2188535