Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-04
2008-08-19
La Villa, Michael (Department: 1794)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S618000, C438S652000, C438S687000, C428S610000, C428S620000, C428S670000, C428S672000, C428S673000, C428S674000, C428S680000
Reexamination Certificate
active
07413974
ABSTRACT:
A metal structure (100) for a contact pad of a semiconductor, which has interconnecting traces of a first copper layer (102). The substrate is protected by an insulating overcoat (104). The first copper layer of first thickness and first crystallite size is selectively exposed by a window (110) in the insulating overcoat. A second copper layer (105) of second thickness covers conformably the exposed first copper layer. The second layer is deposited by an electroless process and consists of a transition zone, adjoining the first layer and having copper crystallites of a second size, and a main zone having crystallites of the first size. The distance a void can migrate from the second layer is smaller than the combined thicknesses of the first and second layers. A nickel layer (106) is on the second copper layer, and a noble metal layer (107) is on the nickel layer.
REFERENCES:
patent: 2005/0023688 (2005-02-01), Park et al.
Abbott Donald C.
Test Howard R.
Brady III Wade J.
La Villa Michael
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thach Tum
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