Copper metallization of silicon wafers using insoluble anodes

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Involving measuring – analyzing – or testing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204232, 204237, 205101, C25D 2114, C25D 2118

Patent

active

060248564

ABSTRACT:
A plating system and method is provided for electroplating silicon wafers with copper using an insoluble anode wherein the electrolyte is agitated or preferably circulated through an electroplating tank of the system and a portion of the electrolyte is removed from the system when a predetermined operating parameter is met. A copper containing solution having a copper concentration greater than the copper concentration of the removed portion is added to the copper plating system simultaneously or after electrolyte removal, in a substantially equal amount to the electrolyte removed from the system and balances the amount of copper plated and removed in the removal stream. In a preferred method and system, an electrolyte holding tank is provided which serves as a reservoir for circulating electrolyte. The addition of the copper containing solution and removal of working electrolyte is also preferably made from the holding tank. The preferred apparatus is preferably cylindrical and is specially configured so that recirculating electrolyte enters near the anode and exits near the cathode with the outlet of the apparatus having a substantially continuous opening around the periphery of the electroplating tank so that electrolyte exiting the tank has a substantially uniform flow across the surface of the cathode. The anode is preferably circular and has a central through opening through which the entering electrolyte passes.

REFERENCES:
patent: H36 (1986-03-01), Smith
patent: 4469564 (1984-09-01), Okinaka et al.
patent: 4778572 (1988-10-01), Brown
patent: 5000827 (1991-03-01), Schuster et al.
patent: 5100517 (1992-03-01), Starinshak et al.
patent: 5143593 (1992-09-01), Ueno et al.
patent: 5344491 (1994-09-01), Katoh
patent: 5352350 (1994-10-01), Andricacos et al.
patent: 5368711 (1994-11-01), Poris
patent: 5368715 (1994-11-01), Hurley et al.
patent: 5385661 (1995-01-01), Andricacos et al.
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5516414 (1996-05-01), Glafenhein et al.
Wire Journal International, "Copper Plating Insoluble Anode System for Steel Cord Process: Development of Copper Ion Supply System", Aug. 1997, pp. 82-87.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Copper metallization of silicon wafers using insoluble anodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copper metallization of silicon wafers using insoluble anodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper metallization of silicon wafers using insoluble anodes will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1902870

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.