Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-08-07
2007-08-07
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257SE21579, C438S672000, C438S687000
Reexamination Certificate
active
10797224
ABSTRACT:
A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch stop layer has a dielectric constant smaller than 3.5, and the dielectric layer has a dielectric constant smaller than 3.0.
REFERENCES:
patent: 6362091 (2002-03-01), Andideh et al.
patent: 6455417 (2002-09-01), Bao et al.
patent: 6537733 (2003-03-01), Campana et al.
patent: 6617690 (2003-09-01), Gates et al.
patent: 6674146 (2004-01-01), Chow
patent: 6734116 (2004-05-01), Guo et al.
patent: 6753260 (2004-06-01), Li et al.
patent: 2002/0068469 (2002-06-01), Andideh et al.
patent: 2002/0100693 (2002-08-01), Lu et al.
patent: 2002/0140103 (2002-10-01), Kloster et al.
patent: 2003/0224593 (2003-12-01), Wong
patent: 2004/0166674 (2004-08-01), Chen et al.
Taiwan Search Report issued May 24, 2006.
Chang Weng
Chou Tzu-Jen
Jang Syun-Ming
Liang Mong-Song
Lu Yung-Cheng
Pert Evan
Sandvik Benjamin P.
Thomas, Layden, Horstemeyer & Risley
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