Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-11-16
2010-06-08
Fahmy, Wael (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S688000, C438S358000, C438S085000, C438S104000, C257S754000, C257S761000, C257S768000, C257S770000
Reexamination Certificate
active
07732331
ABSTRACT:
The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.
REFERENCES:
patent: 3669734 (1972-06-01), Jacob et al.
patent: 5019531 (1991-05-01), Awaya et al.
patent: 5098860 (1992-03-01), Chakravorty et al.
patent: 5252518 (1993-10-01), Sandhu et al.
patent: 5254498 (1993-10-01), Sumi
patent: 5275973 (1994-01-01), Gelatos
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5429989 (1995-07-01), Fiordalice et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5856236 (1999-01-01), Lai et al.
patent: 5892254 (1999-04-01), Park et al.
patent: 5913144 (1999-06-01), Nguyen et al.
patent: 5918150 (1999-06-01), Nguyen et al.
patent: 5939788 (1999-08-01), McTeer
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6008117 (1999-12-01), Hong et al.
patent: 6025269 (2000-02-01), Sandhu
patent: 6037257 (2000-03-01), Chiang et al.
patent: 6107687 (2000-08-01), Fukada et al.
patent: 6120842 (2000-09-01), Lu et al.
patent: 6126806 (2000-10-01), Uzoh
patent: 6127256 (2000-10-01), Matsuno
patent: 6130155 (2000-10-01), Chen et al.
patent: 6130160 (2000-10-01), Vaartstra
patent: 6160314 (2000-12-01), Lee et al.
patent: 6160315 (2000-12-01), Chiang et al.
patent: 6171898 (2001-01-01), Crenshaw et al.
patent: 6204175 (2001-03-01), Lai et al.
patent: 6204179 (2001-03-01), McTeer
patent: 6271136 (2001-08-01), Shue et al.
patent: 6271592 (2001-08-01), Kim et al.
patent: 6342444 (2002-01-01), Higashi et al.
patent: 6348402 (2002-02-01), Kawanoue et al.
patent: 6380065 (2002-04-01), Komai et al.
patent: 6436825 (2002-08-01), Shue
patent: 6441492 (2002-08-01), Cunningham
patent: 6506668 (2003-01-01), Woo et al.
patent: 6924226 (2005-08-01), Cohen
patent: 0 839 927 (1998-05-01), None
patent: 63299250 (1988-12-01), None
patent: 7326612 (1995-12-01), None
patent: 11003890 (1999-01-01), None
patent: 11111919 (1999-04-01), None
patent: 2000-269213 (2000-09-01), None
patent: WO 00/75964 (2000-12-01), None
Abstract of presentation of Korean Materials Academic Society, “Improvement of CVD-TiN diffusion barrier performance in Cu metallization by a thin Al interlayer between Cu and TiN,” Apr. 1999, Korea.
Cho et al., “Diffusion barrier properties of metallorganic chemical vapor deposited tantalum nitride films against cu metallization,”Journal of the Electrochemical Society, 1999, pp. 3724-3730, vol. 146, No. 10.
Gong et al., “Interdiffusion and reaction in the Cu/TiN/Si thin film system, ”Applied Surface Science, Dec. 1994, pp. 335-339, vol. 92.
Kim, B. et al., “Microstructure and deposition rate of aluminum thin films from chemical vapor depostion with dimethylethylamine alane,”Appl. Phys. Lett., 1996, pp. 3567-3569, vol. 68, No. 25.
Kim, K. et al., abstract of presentation at Advanced Metallization Conference, “Improvement of diffusion barrier performance by a thin A1 interlayer deposited between barrier and copper,” Oct. 1999, Orlando, FL.
Kim, K. et al., “A novel scheme of CVD-diffusion barrier for Cu metallization,” D6.6, p. 95 and Im, Se-Joon et al., “A study on CVD TaN as a diffusion barrier for Cu interconnects,” D6.7, pp. 95-96, Presentation at Materials Research Society Symposium—Apr. 2000, San Francisco, abstracts attached.
Kim, S. et al., “A comparative study of film properties of chemical vapor deposition TiN films as diffusion barriers for Cu metallization,”Journal of the Electrochemical Society, 1999, pp. 1455-1460, vol. 146, No. 4.
Kim, Y. et al., “Via poisoning-free dual damascene etching for organic low-k material integration,” Materials Research Society Symposium Spring 2001, Symposium L., L5.5.
Lee et al., “Influence of vacuum-annealing on the diffusion barrier properties of MOCVD TiN for Cu metallization,”Journal of the Korean Physical Society, 1999, pp. S65-S70, vol. 35.
Li et al., “Structural characterization of aluminum films deposited on sputtered-titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane,”Appl. Phys. Lett., 1995, pp. 3426-3428, vol. 67, No. 23.
Mitsuo et al., “Improvement of high-temperature oxidation resistance of titanium nitride and titanium carbide films by aluminum ion implantation,”Surface and Coatings Technology, 1998, pp. 98-103, vols. 103-104.
Nam et al., “Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization,”Applied Physics Letters, 2001, pp. 2549-2551, vol. 79, No. 16.
Nam et al., “Laterally segregated two phase mixture diffusion barrier for Cu metallization, ”Presentation at Advanced Metallization Conference, Oct. 2, 2001, Toyko, Japan, Abstract.
Rha et al., “Improved TiN film as a diffusion barrier between copper and silicon,”Thin Solid Films, May 4, 1998, pp. 134-140, vol. 320.
World-wide web cubic.mat.ncku.edu.tw/ceramics/homepage/intro-e.htm., “Investigation of diffusion barrier of TiAlN films between Cu and Si (86),” pp. 7-8 and “Diffusion barrier and interface properties of TiAlN between Cu and Si (89),” pp. 10, Mar. 29, 2001.
Yoon et al., “Improvement of diffusion barrier performance of 10nm TiN layer using a very thin A1 interlayer,” Abstract of presentation at Advanced Metallization Conference, Oct. 2000, San Diego, USA.
Kim Ki-Bum
Raaijmakers Ivo
Soininen Pekka J.
ASM International N.V.
Fahmy Wael
Knobbe Martens Olson & Bear LLP
Rao Shrinivas H.
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