Copper interconnect for semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With bumps on ends of lead fingers to connect to semiconductor

Reexamination Certificate

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C257S737000, C257S738000, C257S784000, C257SE23145

Reexamination Certificate

active

07345358

ABSTRACT:
An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

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