Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Reexamination Certificate
2009-02-06
2010-11-09
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
C438S148000, C438S152000, C438S586000, C438S632000, C257SE21134, C257SE21279, C257SE21347, C257SE21413, C257SE21703, C257SE29278, C257SE29282
Reexamination Certificate
active
07829393
ABSTRACT:
A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1is cobalt (Co) or molybdenum (Mo), M2is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
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Huang Kuo-Yu
Lin Hui-Fen
Liu Yu-Wei
Tsai Wen-Ching
Au Optronics Corp.
Bacon & Thomas PLLC
Lebentritt Michael S
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