Copper etch process using halides

Details Copper etch process using halides Copper etch process using halides

1993-01-08

1994-06-07

Jones, W. Gary

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156666, C23F 102, B44C 122, H01L 21308

Patent

active

053186621

ABSTRACT:
An etch process for etching copper layers that is useable in integrated circuit fabrication is disclosed which utilizes halides to react with copper, preferrably using photoenergizing and photodirecting assistance of high intensity ultraviolet light, to produce a product which is either volatile or easily removed in solution. The process is anisotropic.

REFERENCES:
patent: 4260649 (1981-04-01), Denison et al.
patent: 4490210 (1984-12-01), Chen et al.
patent: 4622095 (1986-11-01), Grobman et al.
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4687539 (1987-08-01), Burns et al.
patent: 4871416 (1989-10-01), Fuhuda
Journal of the Electrochemical Society, vol. 130, No. 8, 1983, pp. 1777-1779; G. C. Schwartz et al, "Reactive Ion Etching of copper films".
IBM Technical Disclosure Bulletin, vol. 7, No. 9, Feb. 1965, p. 733; A. Reisman et al, "A low temperature technique for selective etching of semiconductor materials".
Cuomo, J. J., et al, "Reactive Ion Etching of Copper", IBM TDB, vol. 25, No. 12, May 1983, p. 6394.
IBM Technical Disclosure Bulletin; vol. 27, No. 3, Aug. 1984, p. 1490, L. Chen, et al. `Pulsed lamp activated chemical etching` *the whole document*.

Affiliated with

Also associated with

Rating

Copper etch process using halides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copper etch process using halides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper etch process using halides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-790639