Copper electrodeposition in microelectronics

Details Copper electrodeposition in microelectronics Copper electrodeposition in microelectronics

2007-12-04

2007-12-04

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000

Reexamination Certificate

active

11272999

ABSTRACT:
An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

REFERENCES:
patent: 3832291 (1974-08-01), Arcilesi
patent: 4336114 (1982-06-01), Mayer et al.
patent: 4347108 (1982-08-01), Willis
patent: 4374709 (1983-02-01), Combs
patent: 4376685 (1983-03-01), Watson
patent: 4512856 (1985-04-01), Paneccasio
patent: 4898652 (1990-02-01), Bammel et al.
patent: 5174887 (1992-12-01), Federman et al.
patent: 5328589 (1994-07-01), Martin
patent: 5433840 (1995-07-01), Dahms et al.
patent: 6024856 (2000-02-01), Haydu et al.
patent: 6113771 (2000-09-01), Landau et al.
patent: 6129830 (2000-10-01), Senge et al.
patent: 6338411 (2002-01-01), Katabe
patent: 6350366 (2002-02-01), Landau et al.
patent: 6379522 (2002-04-01), Landau et al.
patent: 6444110 (2002-09-01), Barstad et al.
patent: 6518182 (2003-02-01), Ishikawa et al.
patent: 6544399 (2003-04-01), Landau et al.
patent: 6551487 (2003-04-01), Reid et al.
patent: 6596151 (2003-07-01), Landau et al.
patent: 6607654 (2003-08-01), Lee et al.
patent: 6610191 (2003-08-01), Landau et al.
patent: 6660153 (2003-12-01), Merricks et al.
patent: 6740221 (2004-05-01), Cheung et al.
patent: 6776893 (2004-08-01), Too et al.
patent: 6797142 (2004-09-01), Crosby
patent: 6800188 (2004-10-01), Hagiwara et al.
patent: 6926922 (2005-08-01), Leung et al.
patent: 2002/0112964 (2002-08-01), Gandikota et al.
patent: 2002/0153260 (2002-10-01), Egli et al.
patent: 2003/0094376 (2003-05-01), Seita et al.
patent: 2003/0168343 (2003-09-01), Commander et al.
patent: 2004/0138075 (2004-07-01), Brown et al.
patent: 2004/0154926 (2004-08-01), Sun et al.
patent: 2004/0168928 (2004-09-01), Hardikar
patent: 2004/0217009 (2004-11-01), Mikkola et al.
patent: 2004/0222104 (2004-11-01), Wang et al.
patent: 2005/0045485 (2005-03-01), Shih et al.
patent: 2005/0045488 (2005-03-01), Paneccasio, Jr. et al.
patent: 2005/0081744 (2005-04-01), Klocke et al.
patent: 2005/0189233 (2005-09-01), Shih et al.
patent: 2005/0199507 (2005-09-01), Shih et al.
patent: 2005/0211564 (2005-09-01), Shih et al.
patent: 2005/0241946 (2005-11-01), Nagai et al.
patent: 2005/0274622 (2005-12-01), Sun et al.
patent: 2006/0118422 (2006-06-01), Ko et al.
patent: 2610705 (1977-09-01), None
International Preliminary Report on Patentability, PCT/US2005/040996, dated May 15, 2007, 4 pages.

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