Copper dry etch process using organic and amine radicals

Details Copper dry etch process using organic and amine radicals Copper dry etch process using organic and amine radicals

1991-06-25

1992-03-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 1566591, 156666, 156902, 156904, 252 791, B44C 122, B29C 3700, C23F 102

Patent

active

051004992

ABSTRACT:
An etch process for etching copper layers that is useable in integrated circuit fabrication is disclosed which utilizes organic and amine radicals to react with copper, preferrable using photoenergizing and photodirecting assistance of high intensity ultraviolet light, to produce a product which is either volatile or easily removed in solution. The process is anisotropic.

REFERENCES:
patent: 4490210 (1984-12-01), Chen et al.
patent: 4557796 (1985-12-01), Druschke et al.
patent: 4919750 (1990-04-01), Bausmith et al.

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