Copper diffusion deterrent interface

Details Copper diffusion deterrent interface Copper diffusion deterrent interface

2006-01-17

2006-01-17

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S773000

Reexamination Certificate

active

06987321

ABSTRACT:
Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.

REFERENCES:
patent: 5451542 (1995-09-01), Ashby
patent: 5693563 (1997-12-01), Teong
patent: 5863834 (1999-01-01), Kawaguchi et al.
patent: 5933758 (1999-08-01), Jain
patent: 5953628 (1999-09-01), Kawaguchi
patent: 6040243 (2000-03-01), Li et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6335570 (2002-01-01), Mori et al.

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