Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-03-11
1999-08-17
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257752, 257764, 257763, 257762, 438597, 438624, 438149, 438151, H01L 2348
Patent
active
059397888
ABSTRACT:
Improved methods for filling openings in silicon substrates with copper and the metal interconnects so produced are provided. One method involves the use of a Ti.sub.x Al.sub.y N.sub.z barrier layer which is stable to the high temperatures required to reflow copper after PVD deposition. Another method involves the use of an aluminum wetting layer between a barrier layer and the copper which effectively lowers the temperature at which copper reflows and therefore allows the use of typical barrier layers.
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Jr. Carl Whitehead
Micro)n Technology, Inc.
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