Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-05
2010-10-19
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S639000, C257SE21159
Reexamination Certificate
active
07816266
ABSTRACT:
The invention concerns a method of forming a copper portion surrounded by an insulating material in an integrated circuit structure, the insulating material being a first oxide, the method having steps including forming a composite material over a region of the insulating material where the copper portion is to be formed, the composite material having first and second materials, annealing such that the second material reacts with the insulating material to form a second oxide that provides a diffusion barrier to copper; and depositing a copper layer over the composite material by electrochemical deposition to form the copper portion.
REFERENCES:
patent: 5969422 (1999-10-01), Ting et al.
patent: 6043153 (2000-03-01), Nogami et al.
patent: 6294836 (2001-09-01), Paranjpe et al.
patent: 7452812 (2008-11-01), Beyer et al.
patent: 2003/0201537 (2003-10-01), Lane et al.
patent: 2007/0238294 (2007-10-01), Beyer et al.
patent: 2008/0124924 (2008-05-01), Naik
patent: 2008/0254232 (2008-10-01), Gordon et al.
patent: 2008/0280151 (2008-11-01), Jourdan et al.
patent: 2008/0296768 (2008-12-01), Chebiam et al.
patent: 2009/0102051 (2009-04-01), Beyer et al.
patent: 2009/0152722 (2009-06-01), Chang et al.
patent: 2009/0209099 (2009-08-01), Yu et al.
European Search Report from corresponding European Application No. 06301019, filed Oct. 5, 2006.
Jourdan Nicolas
Torres Joaquin
Jorgenson Lisa K.
Morris James H.
STMicroelectronics (Crolles 2) SAS
Wilczewski Mary
Wolf Greenfield & Sacks P.C.
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