Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-27
2007-03-27
Pham, Thanhha (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000
Reexamination Certificate
active
10776076
ABSTRACT:
The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
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Datta Madhav
Emory Dave
Joshi Subhash M.
Menezes Susanne
Suh Doowon
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Pham Thanhha
LandOfFree
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