Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-15
2008-04-15
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S700000, C428S607000
Reexamination Certificate
active
07358189
ABSTRACT:
To reduce warping of a copper clad laminate coated with copper foils of different thicknesses on both sides, and thereby to improve production efficiency of the printed-wiring boards, there is provided a copper clad laminate coated with copper foils of different thicknesses on both sides, wherein a first copper foil on one side of the laminate is not recrystallizable by hot pressing for production of said laminate and a second foil on the other side is recrystallizable by the hot pressing and thicker than the first foil.
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Nagatani Seiji
Nakano Masahiko
Yamamoto Takuya
Kebede Brook
Mitsui Mining & Smelting Co. Ltd.
Nguyen Khiem D
Rothwell Figg Ernst & Manbeck P.C.
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