Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-20
2005-12-20
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S660000
Reexamination Certificate
active
06977220
ABSTRACT:
Formation of copper alloy interconnect lines on integrated circuits includes introducing dopant elements into a copper layer. Copper alloy interconnect lines may be formed by providing a doping layer over a copper layer, driving dopant material into the copper layer with a high temperature step, and polishing the copper layer to form individual lines. Copper alloy interconnect lines may be formed by implanting dopants into individual lines. Copper alloy interconnect lines may be formed by providing a doped seed layer with a capping layer to prevent premature oxidation, forming an overlying copper layer, driving in the dopants, and polishing to form individual lines. In this way, electromigration resistance and adhesion characteristics may be improved by having relatively higher doping concentrations at outer portions of an interconnect line while the desired low electrical resistivity of the interconnect is maintained by keeping the interior portions of the interconnect with a substantially lower doping concentration.
REFERENCES:
patent: 6022808 (2000-02-01), Nogami et al.
patent: 6130156 (2000-10-01), Havemann et al.
patent: 6136707 (2000-10-01), Cohen
patent: 6160315 (2000-12-01), Chiang et al.
patent: 6228759 (2001-05-01), Wang et al.
patent: 6268291 (2001-07-01), Andricacos et al.
patent: 6303498 (2001-10-01), Chen et al.
patent: 6479389 (2002-11-01), Tsai et al.
patent: 6518668 (2003-02-01), Cohen
patent: 6610151 (2003-08-01), Cohen
patent: 6689689 (2004-02-01), Besser et al.
patent: 2003/0129828 (2003-07-01), Cohen
patent: 2004/0087171 (2004-05-01), Cohen
patent: 0 878 834 (1998-11-01), None
patent: 2000150522 (2000-05-01), None
Corrosion and Electromigration-Resistant High-Conductivity VLSI Inteconnections, IBM Technical Disclosure Bulletin, IBM Corp., New York, U.S.A., vol. 36, No. 4, Apr. 1, 1993, pp. 335-336.
Cu(Sn) Alloys for Chip and Package Interconnects, IBM Technical Disclosure Bulletin, IBM Corp., New York, U.S.A., vol. 37, No. 10, Oct. 1, 1994, p. 61.
Search Report for PCT/US 01/43915 mailed Aug. 5, 2002, 5 pages.
Block Carolyn
Jin Shu
Marieb Thomas N.
McGregor Paul
Blakely, Sokloff, Taylor & Zafman LLP
Hoang Quoc
Intel Corporation
Nelms David
LandOfFree
Copper alloys for interconnections having improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Copper alloys for interconnections having improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper alloys for interconnections having improved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3513262