Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2003-09-22
2009-06-09
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S765000, C257S688000
Reexamination Certificate
active
07545040
ABSTRACT:
A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.
REFERENCES:
patent: 5552341 (1996-09-01), Lee
patent: 6228759 (2001-05-01), Wang et al.
patent: 2003/0116845 (2003-06-01), Bojkov et al.
patent: 2003/0155655 (2003-08-01), Fitzsimmons et al.
patent: 2003/0217462 (2003-11-01), Wang et al.
patent: 2004/0188850 (2004-09-01), Lee et al.
patent: 0751567 (1997-01-01), None
patent: 02-165632 (1990-06-01), None
patent: 09-020942 (1997-01-01), None
patent: 09-064033 (1997-03-01), None
patent: 11-102909 (1999-04-01), None
patent: 2000-150522 (2000-05-01), None
patent: 2000-208517 (2000-07-01), None
patent: 2001-298084 (2001-10-01), None
E. T. Ogawa et al., “Stress-Induced Voiding Under Vias Connected To Wide Cu Metal Leads”, Proceedings of IEEE International Reliability Physics Symposium 2002, USA, The Electron Device Society and The Reliability Society of the Institute of Electrical and Electronics Engineers, Inc, Apr. 7, 2002, pp. 312-321.
Hayashi Yoshihiro
Hiroi Masayuki
Ikarashi Nobuyuki
Ueki Makoto
Arora Ajay K
Le Thao X
NEC Corporation
Sughrue & Mion, PLLC
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