Copolymers for photoresists and processes therefor

Details Copolymers for photoresists and processes therefor Copolymers for photoresists and processes therefor

2005-03-29

2005-03-29

Lipman, Bernard (Department: 1713)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S325000, C430S326000, C430S331000, C526S253000, C526S254000

Reexamination Certificate

active

06872503

ABSTRACT:
Fluoroolefin/acid group or protected acid group-containing copolymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These copolymer compositions comprise 1) at least one fluoroolefin, preferably hexafluoroisobutylene, and 2) an acid group or a protected acid group (e.g., a t-alkyl ester, preferably a t-butyl ester), which together impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which makes them useful for lithography at these short wavelengths.

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Bloomstein et al. (J. Vacuum Sci. Technol., B16, 3154 (1998).

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