Coplanar solar cell metal contact annealing in plasma...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S485000, C438S680000, C438S788000, C136S246000

Reexamination Certificate

active

08030206

ABSTRACT:
A solar cell fabrication process is described that includes etching a cap layer into a front surface of a semiconductor structure, depositing an anti-reflective coating onto the front surface of the semiconductor structure, forming a front electrical contact on the front surface of the semiconductor structure, forming a first back metal contact on a back surface of the semiconductor structure, utilizing a plasma enhanced chemical vapor deposition (PECVD) process to apply a dielectric layer to the first back metal contact, the PECVD process performed at within a temperature environment and for a duration that allows for the annealing of metal associated with the front electrical contact and the first back metal contact, and attaching at least one secondary electrical contact to the dielectric layer.

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