Coplanar silicon-on-insulator (SOI) regions of different...

Details Coplanar silicon-on-insulator (SOI) regions of different... Coplanar silicon-on-insulator (SOI) regions of different...

2008-07-01

2008-07-01

Ngo, Ngan (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S152000, C438S155000, C257SE21320, C257SE21545, C257SE21561

Reexamination Certificate

active

11929106

ABSTRACT:
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator (SOI) region having a first crystal orientation, a second SOI region having a second crystal orientation and a third SOI region having a third crystal orientation on the substrate. The first, second and third SOI regions are coplanar. Numerous other aspects are provided.

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