Converting a hydrogen silsesquioxane film to an oxide using a fi

Details Converting a hydrogen silsesquioxane film to an oxide using a fi Converting a hydrogen silsesquioxane film to an oxide using a fi

1997-11-05

1999-11-02

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438670, H01L 214763

Patent

active

059769661

ABSTRACT:
An insulating film is formed by CVD on the surface of a semiconductor substrate formed with circuit elements such as transistors, and thereafter a hydrogen silsesquioxane resin film is formed on the insulating film by spin-coating or the like. This resin film is sequentially subjected to low temperature annealing at 400.degree. C. or lower and then to high temperature annealing at 700.degree. C. or higher. The low temperature annealing changes the resin film into a silicon oxide film, and the high temperature annealing is performed in order to make dense the film quality of the silicon oxide film. The high temperature annealing is performed by rapid thermal annealing in an oxidizing atmosphere of water vapor or the like. A CVD insulating film is formed on the densified silicon oxide film and planarized by CMP or the like, according to necessity. A contact hole is formed through the CVD insulating film, densified silicon oxide film and the insulating film, and a wiring layer is thereafter deposited.

REFERENCES:
patent: 4756977 (1988-07-01), Haluska et al.
patent: 5059448 (1991-10-01), Chandra et al.
patent: 5085893 (1992-02-01), Weiss et al.
patent: 5118530 (1992-06-01), Hanneman et al.
patent: 5145723 (1992-09-01), Ballance et al.
patent: 5336532 (1994-08-01), Haluska et al.
patent: 5370904 (1994-12-01), Mine et al.
patent: 5380567 (1995-01-01), Haluska
patent: 5399441 (1995-03-01), Bearinger et al.
patent: 5456952 (1995-10-01), Garza et al.
patent: 5458912 (1995-10-01), Camilletti et al.
patent: 5481135 (1996-01-01), Chandra et al.
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5693565 (1997-12-01), Camelletti et al.
patent: 5750403 (1998-05-01), Inoue et al.
patent: 5821162 (1996-07-01), Yamaha et al.
patent: 5866197 (1997-06-01), Bremmer et al.
patent: 5904576 (1997-10-01), Yamaha et al.
patent: 5912188 (1997-08-01), Gardner et al.
Lee, et al "Application of HSQ (Hydrogen Silsesquioxane) based SOG to pre-metal dielectric planarization in STC (Stacked Capacitor) DRAM," 1996 Symposium on VLSI Technology Digest of Technical Papers,pp. 112-113, 1996.
B.T. Ahlburn, et al., "A Non-Etch Back Spin on Glass for 0.5 .mu.M Devices Using Hydrogen Silsesquioxane As A Replacement for Methylsiloxane", VMIC Conference 1994 ISMIC, Jun. 7-8, 1994, pp. 120-122.
B.T. Ahlburn, et al., "Hydrogen Silsesquioxane-Based Flowable Oxide As An Element in The Interlevel Dielectric for For Sub 0.5 Micron ULSI Circuits", DUMIC Conference 1995 ISMIC, Feb. 21-22, 1995, pp. 36-42.
D.S. Ballance, et al., "Low Temperature Reflow Planarization Using A Novel Spin-On Interlevel Dielectric", VMIC Conference 1992 ISMIC, Jun. 9-10, 1992, pp. 180-186.
D. Pramanik, et al., "Reliability of Multilevel Circuits Using Hydrogen Silsesquioxane FOx For Interlevel Dielectric Planarization", VMIC Conference 1993 ISMIC, Jun 8-9, 1993, pp. 329-331.
Brochure "Application Notes for Dow Corning Flowable Oxide", 1993, Dow Corning Corporation, pp. 1-4.
R. Dawson, et al., "Performace of Logic Devices Utilizing A Novel Spin-On Dielectric Planarization Process", VMIC Conference 1993 ISMIC, Jun. 8-9, 1993, p. 218.

Affiliated with

Also associated with

Rating

Converting a hydrogen silsesquioxane film to an oxide using a fi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Converting a hydrogen silsesquioxane film to an oxide using a fi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Converting a hydrogen silsesquioxane film to an oxide using a fi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134785