Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-29
2009-08-25
Nguyen, Cuong Q (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S480000
Reexamination Certificate
active
07579221
ABSTRACT:
An SOI design layout is converted to a bulk design layout. According to a method of converting a first semiconductor design layout based on an Silicon-on-Insulator (SOI) process to a second semiconductor design layout based on a bulk process, an insulator layer of the SOI process beneath active devices in the first semiconductor design layout is removed. A conductive sub-surface structure for routing voltage is added to the first semiconductor design layout. Further, the active devices from the SOI process are converted to the bulk process to form the second semiconductor design layout without requiring a relayout of the first semiconductor design layout on a semiconductor surface. The bulk design layout is utilized to fabricate a semiconductor device having a plurality of active devices.
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Burr James B.
Ditzel David R.
Masleid Robert P.
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