Controlling threading dislocation densities in Ge on Si...

Details Controlling threading dislocation densities in Ge on Si... Controlling threading dislocation densities in Ge on Si...

2007-07-31

2007-07-31

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S497000, C438S500000

Reexamination Certificate

active

10022689

ABSTRACT:
A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer. In another embodiment of the invention there is provided a semiconductor structure including a silicon substrate, and a GeSi graded region grown on the silicon substrate, compressive strain being incorporated in the graded region to offset the tensile strain that is incorporated during thermal processing. In yet another embodiment of the invention there is provided a semiconductor structure including a semiconductor substrate, a first layer having a graded region grown on the substrate, compressive strain being incorporated in the graded region to offset the tensile strain that is incorporated during thermal processing, the first layer having a surface which is planarized, and a second layer provided on the first layer. In still another embodiment of the invention there is provided a method of fabricating a semiconductor structure including providing a semiconductor substrate, providing at least one first crystalline epitaxial layer on the substrate, and planarizing the surface of the first layer.

REFERENCES:
patent: 4010045 (1977-03-01), Ruehrwein
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 4987462 (1991-01-01), Kim et al.
patent: 4990979 (1991-02-01), Otto
patent: 4997776 (1991-03-01), Harame et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5155571 (1992-10-01), Wang et al.
patent: 5166084 (1992-11-01), Pfiester
patent: 5177583 (1993-01-01), Endo et al.
patent: 5202284 (1993-04-01), Kamins et al.
patent: 5207864 (1993-05-01), Bhat et al.
patent: 5208182 (1993-05-01), Narayan et al.
patent: 5212110 (1993-05-01), Pfiester et al.
patent: 5221413 (1993-06-01), Brasen et al.
patent: 5240876 (1993-08-01), Gaul et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5250445 (1993-10-01), Bean et al.
patent: 5285086 (1994-02-01), Fitzgerald, Jr.
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5298452 (1994-03-01), Meyerson
patent: 5310451 (1994-05-01), Tejwani et al.
patent: 5316958 (1994-05-01), Meyerson
patent: 5346848 (1994-09-01), Grupen-Shemansky et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5399522 (1995-03-01), Ohori
patent: 5413679 (1995-05-01), Godbey
patent: 5424243 (1995-06-01), Takasaki
patent: 5426069 (1995-06-01), Selvakumar et al.
patent: 5426316 (1995-06-01), Mohammad
patent: 5442205 (1995-08-01), Brasen et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5462883 (1995-10-01), Dennard et al.
patent: 5476813 (1995-12-01), Naruse
patent: 5479033 (1995-12-01), Baca et al.
patent: 5484664 (1996-01-01), Kitahara et al.
patent: 5523243 (1996-06-01), Mohammad
patent: 5523592 (1996-06-01), Nakagawa et al.
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5536361 (1996-07-01), Kondo et al.
patent: 5540785 (1996-07-01), Dennard et al.
patent: 5548128 (1996-08-01), Soref et al.
patent: 5572043 (1996-11-01), Shimizu et al.
patent: 5596527 (1997-01-01), Tomioka et al.
patent: 5607876 (1997-03-01), Biegelsen et al.
patent: 5617351 (1997-04-01), Bertin et al.
patent: 5630905 (1997-05-01), Lynch et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 5683934 (1997-11-01), Candelaria
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5714777 (1998-02-01), Ismail et al.
patent: 5728623 (1998-03-01), Mori
patent: 5739567 (1998-04-01), Wong
patent: 5759898 (1998-06-01), Ek et al.
patent: 5777347 (1998-07-01), Bartelink
patent: 5786612 (1998-07-01), Otani et al.
patent: 5786614 (1998-07-01), Chuang et al.
patent: 5792679 (1998-08-01), Nakato
patent: 5808344 (1998-09-01), Ismail et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5891769 (1999-04-01), Liaw et al.
patent: 5906708 (1999-05-01), Robinson et al.
patent: 5906951 (1999-05-01), Chu et al.
patent: 5912479 (1999-06-01), Mori et al.
patent: 5937274 (1999-08-01), Kondow et al.
patent: 5943560 (1999-08-01), Chang et al.
patent: 5963817 (1999-10-01), Chu et al.
patent: 5966622 (1999-10-01), Levine et al.
patent: 5998807 (1999-12-01), Lustig et al.
patent: 6013134 (2000-01-01), Chu et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6033995 (2000-03-01), Muller
patent: 6051511 (2000-04-01), Thakur et al.
patent: 6058044 (2000-05-01), Sugiura et al.
patent: 6059895 (2000-05-01), Chu et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6096590 (2000-08-01), Chan et al.
patent: 6103559 (2000-08-01), Gardner et al.
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6117750 (2000-09-01), Bensahel et al.
patent: 6130453 (2000-10-01), Mei et al.
patent: 6133799 (2000-10-01), Favors, Jr. et al.
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6153495 (2000-11-01), Kub et al.
patent: 6154475 (2000-11-01), Soref et al.
patent: 6160303 (2000-12-01), Fattaruso
patent: 6162688 (2000-12-01), Gardner et al.
patent: 6184111 (2001-02-01), Henley et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6191432 (2001-02-01), Sugiyama et al.
patent: 6194722 (2001-02-01), Fiorini et al.
patent: 6204529 (2001-03-01), Lung et al.
patent: 6207977 (2001-03-01), Augusto
patent: 6210988 (2001-04-01), Howe et al.
patent: 6218677 (2001-04-01), Broekaert
patent: 6232138 (2001-05-01), Fitzgerald et al.
patent: 6235567 (2001-05-01), Huang
patent: 6242324 (2001-06-01), Kub et al.
patent: 6249022 (2001-06-01), Lin et al.
patent: 6251755 (2001-06-01), Furukawa et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6266278 (2001-07-01), Harari et al.
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 6271726 (2001-08-01), Fransis et al.
patent: 6291321 (2001-09-01), Fitzgerald
patent: 6313016 (2001-11-01), Kibbel et al.
patent: 6316301 (2001-11-01), Kant
patent: 6323108 (2001-11-01), Kub et al.
patent: 6329063 (2001-12-01), Lo et al.
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6350993 (2002-02-01), Chu et al.
patent: 6352909 (2002-03-01), Usenko
patent: 6368733 (2002-04-01), Nishinaga
patent: 6372356 (2002-04-01), Thornton et al.
patent: 6372593 (2002-04-01), Hattori et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6407406 (2002-06-01), Tezuka
patent: 6420937 (2002-07-01), Akatsuka et al.
patent: 6425951 (2002-07-01), Chu et al.
patent: 6429061 (2002-08-01), Rim
patent: 6489639 (2002-12-01), Hoke et al.
patent: 6521041 (2003-02-01), Wu et al.
patent: 6524935 (2003-02-01), Canaperi et al.
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6573126 (2003-06-01), Cheng et al.
patent: 6583015 (2003-06-01), Fitzgerald et al.
patent: 6591321 (2003-07-01), Arimilli et al.
patent: 6593191 (2003-07-01), Fitzgerald
patent: 6597016 (2003-07-01), Yuki et al.
patent: 6602613 (2003-08-01), Fitzgerald
patent: 6603156 (2003-08-01), Rim
patent: 6646322 (2003-11-01), Fitzgerald
patent: 6674150 (2004-01-01), Takagi et al.
patent: 6677192 (2004-01-01), Fitzgerald
patent: 6689671 (2004-02-01), Yu et al.
patent: 6703144 (2004-03-01), Fitzgerald
patent: 6703688 (2004-03-01), Fitzergald
patent: 6713326 (2004-03-01), Cheng et al.
patent: 6750130 (2004-06-01), Fitzgerald
patent: 6784101 (2004-08-01), Yu et al.
patent: 6803777 (2004-10-01), Pfaff et al.
patent: 6805744 (2004-10-01), Kim et al.
patent: 6876010 (2005-04-01), Fitzgerald
patent: 7081410 (2006-07-01), Fitzgerald
patent: 2001/0003364 (2001-06-01), Sugawara et al.
patent: 2002/0043660 (2002-04-01), Yamazaki et al.
patent: 2002/0052084 (2002-05-01), Fitzgerald
patent: 2002/0084000 (2002-07-01), Fitzgerald
patent: 2002/0096717 (2002-07-01), Chu et al.
patent: 2002/0100942 (2002-08-01), Fitzgerald et al.
patent: 2002/0123167 (2002-09-01), Fitzgerald
patent: 2002/0123183 (2002-09-01), Fitzgerald
patent: 2002/0123197 (2002-09-01), Fitzgerald et al.
patent: 2002/0125471 (2002-09-01), Fitz

Affiliated with

Also associated with

Rating

Controlling threading dislocation densities in Ge on Si... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controlling threading dislocation densities in Ge on Si..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlling threading dislocation densities in Ge on Si... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3806999