Controlling the oxygen content of Czochralski process of silicon

Details Controlling the oxygen content of Czochralski process of silicon Controlling the oxygen content of Czochralski process of silicon

1975-05-27

1977-03-01

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 156DIG83, 23273SP, B01J 1718, C01B 3302

Patent

active

040100642

ABSTRACT:
The oxygen content of silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by changing the surface characteristics of the portion of the silica vessel which is in contact with the melt so as to provide an increased oxygen concentration in the melt during the crystal drawing process.

REFERENCES:
patent: 3173765 (1965-03-01), Gobat
patent: 3520810 (1970-07-01), Plaskett
Lawson et al., Preparation of Single Crystals, London, Butterworths Sci. Pub., 1958, pp. 125-129.
Hartman et al., Metal Progress, Oct. 1956, pp. 100-103.
Dash, Journal of App. Phy., vol. 29, No. 4, Apr. 1958, pp. 736 and 737.
Hannay, Semi-Conductors, Monograph Series No. 140, 1960, pp. 107-110.

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