Controlling semiconductor structural warpage in rapid thermal pr

Details Controlling semiconductor structural warpage in rapid thermal pr Controlling semiconductor structural warpage in rapid thermal pr

1997-09-12

1999-07-20

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

H01L 21324

Patent

active

059267429

ABSTRACT:
A method for correcting the shape of a semiconductor structure. According to the method the shape of a semiconductor structure is initially determined to discern the presence, location and magnitude of structural deformities including warp and bow. Information derived from the topography of the structure is then used to control a heating apparatus. More particularly, individual zones or elements of a multiple zone heating assembly are selectively controlled to direct heat radiation of nonuniform intensities toward different regions of the structure to effect non-isothermal conditions within the structure and thereby reduce deformities that were determined to be present in the structure prior to shape correction.

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