Controlling plasma particulates by contouring the plasma sheath

Coating apparatus – Gas or vapor deposition – With treating means

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118728, 156345, 1566431, 20419212, 20419232, 20429815, 427569, H01L 2100, C23C 100

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active

054945232

ABSTRACT:
A plasma processing apparatus including a wafer supporting pedestal which is designed to reduce particle trapping phenomena. In a region of the pedestal surface which surrounds or abuts the wafer, the pedestal has a permittivity which is substantially equal to or greater than that of the wafer surface. As a result, the sheath boundary is reshaped to reduce particle trapping.

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