Controlling oxygen precipitates in silicon wafers using...

Details Controlling oxygen precipitates in silicon wafers using... Controlling oxygen precipitates in silicon wafers using...

2011-03-15

2011-03-15

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C117S020000, C219S121600, C257SE21347

Reexamination Certificate

active

07906443

ABSTRACT:
A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

REFERENCES:
patent: 2003/0164139 (2003-09-01), Kobayashi et al.
patent: 2004/0185680 (2004-09-01), Hauf et al.
patent: 2006/0273391 (2006-12-01), Diaz et al.
patent: 10-092761 (1998-04-01), None
K. Sueoka, “Modeling of Internal Gettering of Nickel and Copper by Oxide Precipitates in Czochralski-Si Wafers”, Journal of Electrochemical Society, 152, pp. G 731-G 735 (2005).
K. Yasutake, M. Umeno, and H. Kawabe, “Mechanical properties of heat-treated Czochralski-grown silicon crystals”, Applied Physics Letters, 37, pp. 789-791(1980).
T. Abe and H. Yamada-Kaneta, “Annealing behavior of oxygen in-diffusion from Si O2film to silicon substrate”, Journal of Applied Physics, 96 (2004) pp. 4143-4149.

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