Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2005-03-15
2005-03-15
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257S772000, C438S612000
Reexamination Certificate
active
06867503
ABSTRACT:
A metal interconnection structure for semiconductor chips has a metal interface layer (105), preferably nickel, deposited over the metal of the chip contact pad (104, usually aluminum or copper). A subsequent metal layer (106) is an alloy of a metal such as copper or gold with nickel, wherein the quantity of nickel is selected so that it diminishes the interdiffusion rate of the nickel from the interface layer (105) during the reflow and annealing processes. Reflowable metal (107) for interconnection completes the structure. In another embodiment, the reflowable metal (107) contains an admixture of the interface metal in a quantity to diminish the interdiffusion rate of metal from the interface layer during the annealing process. In either embodiment, the formation of voids in the interface layer (105) is diminished.
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Brady III Wade James
Lee Eddie
Owens Douglas W.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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