Controlling edge deposition on semiconductor substrates

Details Controlling edge deposition on semiconductor substrates Controlling edge deposition on semiconductor substrates

1994-10-21

1996-09-17

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Work support

156345, 1566431, 20429807, 20424833, 427569, C23C 1600, B44C 122

Patent

active

055564763

ABSTRACT:
A substrate processing apparatus comprising a housing defining a processing chamber for receiving a substrate therein. Inside the chamber a substrate supporting susceptor, including an upper substrate receiving portion is located. The receiving portion defines a walled pocket dimensioned to receive the substrate therein. When the substrate is so received the walls of the pocket define an annulus with the outer edge of the substrate. Typically the pocket walls are perpendicular to a primary plane of the substrate and are at least as high, and preferably twice as high, as the substrate is thick. At the outer, circumferential edge of the pocket a gas manifold is formed. The manifold is arranged so that, during processing, a gas which can be projected toward the edge of a substrate received in the pocket. This gas moves upwards between the annulus defined between the wall of the pocket and the outer edge of the substrate, thereby preventing processing gas from contacting the edge portion of the substrate.

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Patent Abstract of Japan vol. 16 No. 372 (E-1246), 11 Aug. 1992 & JP-A-04 119630 (Mitsubishi Electric Corp.) 21 Apr. 1992.

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