Controlling dopant diffusion in a semiconductor region

Details Controlling dopant diffusion in a semiconductor region Controlling dopant diffusion in a semiconductor region

2005-06-02

2009-12-08

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S558000, C257SE33028

Reexamination Certificate

active

07629240

ABSTRACT:
Dopant diffusion into semiconductor material is controlled during fabrication of a semiconductor structure by depositing a nucleation layer over a first layer of the semiconductor structure and depositing a device layer containing the dopant over the nucleation layer. The nucleation layer serves as a diffusion barrier by limiting in depth the diffusion of the dopant into the first layer. The dopant can include arsenic (As).

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Takamoto et al. “High Efficiency Monolithic InGaP/GaAs Tandem Solar Cells with Improved Top-Cell Back-Surface-Field Layers”, IEEE, 1995.

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